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| AO4916A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4916A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard product AO4916A is Pb-free (meets ROHS & Sony 259 specifications). AO4916AL is a Green Product ordering option. AO4916A and AO4916AL are electrically identical. Features Q1 Q2 VDS (V) = 30V VDS(V) = 30V ID = 8.5A (VGS = 10V) ID = 8.5A (VGS = 10V) RDS(ON) < 17m <17m (VGS = 10V) RDS(ON) < 27m <27m (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K Q1 D1 K D2 Q2 SOIC8 G1 S1 A G2 S2 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward A Current TA=25C TA=70C B Max Q1 30 20 8.5 6.6 30 2 1.28 -55 to 150 Max Q2 30 20 8.5 6.6 30 2 1.28 -55 to 150 Units V V A VGS TA=25C TA=70C ID IDM PD TJ, TSTG Symbol VDS IF IFM PD TJ, TSTG W C Units V A Maximum Schottky 30 3 2.2 20 2 1.28 -55 to 150 Pulsed Diode Forward Current Power Dissipation A TA=25C TA=70C Junction and Storage Temperature Range W C Alpha & Omega Semiconductor, Ltd. AO4916A Parameter: Thermal Characteristics MOSFET Q1 A t 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Parameter: Thermal Characteristics MOSFET Q2 A t 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Symbol RJA RJL Symbol RJA RJL Typ 48 74 35 Typ 48 74 35 Max 62.5 110 40 Max 62.5 110 40 Units C/W Units C/W t 10s Steady-State Steady-State RJA RJL 47.5 71 32 62.5 110 40 C/W A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 0 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4916A Q1 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current. (Set by Schottky leakage) Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=8.5A Diode+Schottky Forward Voltage IS=1A Maximum Body-Diode+Schottky Continuous Current Conditions ID=250A, VGS=0V VR=30V VR=30V, TJ=125C VR=30V, TJ=150C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=8.5A TJ=125C 1 30 14.2 20.5 20.3 23 0.47 0.6 3.5 955 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 175 112 0.5 17 VGS=10V, VDS=15V, ID=8.5A 9 3.4 4.7 5 VGS=10V, VDS=15V, RL=1.8, RGEN=3 IF=8.5A, dI/dt=100A/s IF=8.5A, dI/dt=100A/s 6 19 4.5 20 9.5 6.5 7.5 25 6 24 12 0.85 24 12 1250 17 27 27 1.7 Min 30 0.007 0.05 3.2 12 10 20 100 3 mA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC Typ Max Units V DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance (FET + Schottky) Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode + Schottky Reverse Recovery Time Body Diode + Schottky Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 0 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4916A Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10V 30 ID (A) 4V 4.5V ID(A) 3.5V 35 30 25 20 15 10 5 25C 125C VDS=5V 20 10 VGS=3V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 0 1.5 2 2.5 3 3.5 4 4.5 VGS (Volts) Figure 2: Transfer Characteristics 24 Normalized On-Resistance 22 20 RDS(ON) (m) 18 16 14 12 10 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V VGS=4.5V 1.6 VGS=4.5V 1.4 1.2 VGS=10V ID=8A 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On resistance vs. Junction Temperature 40 35 30 RDS(ON) (m) IS (A) 25 20 15 10 5 0 2 4 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage 25C 125C ID=8.5A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note F) FET+SCHOTTKY 25C 125C Alpha & Omega Semiconductor, Ltd. AO4916A Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1600 VDS=15V ID=8.5A Capacitance (pF) 1400 1200 1000 800 600 400 200 0 0 Crss 5 10 15 20 25 30 Coss FET+SCHOTTKY Ciss f=1MHz VGS=0V VDS (Volts) Figure 8: Capacitance Characteristics 100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 10s 10ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 Power (W) 1ms 100s 40 TJ(Max)=150C TA=25C 30 10.0 ID (A) 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO4916A Q2 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=8.5A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current TJ=125C 1 30 14.4 22 20.3 23 0.75 1 3 955 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 145 112 0.5 17 VGS=10V, VDS=15V, ID=8.5A 9 3.4 4.7 5 VGS=10V, VDS=15V, RL=1.8, RGEN=3 IF=8.5A, dI/dt=100A/s 2 Min 30 Typ Max Units V 1 5 100 A nA V A 17 27 27 m m S V A pF pF pF 0.85 24 12 nC nC nC nC 6.5 7.5 25 6 21 10 ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1.7 3 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 1250 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 6 19 4.5 16.7 6.3 Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4916A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 26 24 22 RDS(ON) (m) 20 18 16 14 12 10 0 5 10 15 20 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 VGS=10V Normalized On-Resistance VGS=4.5V 1.6 VGS=10V ID=8.5A 1.4 VGS=4.5V 1.2 4V 10V 4.5V 3.5V ID(A) 32 28 24 20 16 12 8 4 0 1.5 2 2.5 125C VDS=5V VGS=3V 13.4 22 30.76 3.5 25C 16 26 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 1 1.0E+01 1.0E+00 40 RDS(ON) (m) ID=8.5A 30 125C 20 25C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage IS (A) 1.0E-01 125C 1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4916A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=15V ID=8.5A Capacitance (pF) 1250 Ciss 1000 750 500 250 0 0 Crss 5 10 Coss 13.4 22 15 0.76 20 16 26 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 50 RDS(ON) limited 10s 10s 100s Power (W) 40 30 20 10 0 0.001 TJ(Max)=150C TA=25C 10.0 ID (A) 1ms 10ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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